| PART |
Description |
Maker |
| IXFP5N50PM |
PolarHVTM HiPerFET Power MOSFET
|
IXYS Corporation
|
| IXFT30N60P IXFV30N60PS |
MOSFET N-CH 600V 30A TO-268 D3 30 A, 600 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode
|
IXYS, Corp.
IXYS Corporation
|
| IXTQ22N60P IXTV22N60PS |
MOSFET N-CH 600V 22A TO-3P 22 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
PolarHVTM Power MOSFET N-Channel Enhancement Mode
|
IXYS, Corp.
IXYS Corporation
|
| IXTP5N60P |
PolarHVTM Power MOSFET
PolarHV Power MOSFET
|
IXYS Corporation
|
| AT90SC4816RS |
AT90SC4816RS Summary [Updated 06/03. 2 Pages] Summary of the AT90SC4816RS giving the key features. a brief description and a block diagram.
Low-power, high-performance, 8-/16-bit secure microcontroller with 48K Byte ROM and 16K Byte EEPROM. Security Features: MMU, MED, OTP (One Time Programmable) EEPROM area, RNG (random Number Generator), "out of bounds" detectors, side chann
|
Atmel
|
| VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
Power Factor Correction Modules: MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
|
International Rectifier
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFUC20 IRFRC20 IRFUC20PBF |
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A)
(IRFRC20 / IRFUC20) Power MOSFET
|
IRF[International Rectifier]
|
| IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET
16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET
1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Vishay Intertechnology, Inc.
Intersil, Corp.
VISHAY INTERTECHNOLOGY INC
|
| IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET
|
Infineon Technologies AG
IXYS CORP
IXYS Corporation
|
| VRF150 VRF15010 VRF150MP |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 15; Gain (dB): 10; VDD (V): 50; Coss (pF): 240; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
|
